AOS MOS管

Alpha and Omega Semiconductor Introduces a New Family of High Performance 
Common-Drain MOSFETs 
The new devices help battery pack designers simplify their design and minimize footprint area 
SUNNYVALE, Calif., Oct. 18th, 2013 – Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, 
developer and global supplier of a broad range of power semiconductors and power ICs, today release a new dual MOSFET 
family in the common-drain configuration in both DFN 5x6 and Micro-DFN 3.2x2 packages. These devices are suitable for 
battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as 
well as voltage protection. The products provide ultra-low RSS (source-to-source resistance) of less than 10mOhms at 10V 
gate drive. AON6810, AON6812, and AOC4810 provide ideal solutions for enhancing battery pack performance in the latest 
generation Ultrabooks and tablets, where low conduction loss is a must for optimizing battery life. 
The new devices use the latest AlphaMOS™ technology to accomplish very low RDS(ON)
 along with 4kV ESD protection to 
enhance battery pack safety. AON6810 and AON6812 use a bottom-exposed DFN5x6 package for enhanced thermal 
capability. The AON6812 features a low 8mOhm max total RSS (source-to-source) resistance at 10V drive. Rated with a 30V 
breakdown voltage, it is capable of charging and discharging a laptop battery pack with the least amount of power loss and 
heat dissipation. The AON6810 provides an extra level of protection with an internal temperature sense diode that provides 
first-hand thermal information to the battery control IC. By utilizing the temperature sense pins of AON6810, designers can 
accurately monitor the MOSFETs’ thermal condition in a real time basis to prevent any abnormal overheating.  
To meet the demand of ultra-thin battery packs, the AOC4810 takes advantage of AOS’s innovative Micro-DFN package, 
which features an ultra-low profile of only 0.4mm. Unlike conventional CSP (chip scale packaging), the Micro-DFN 
eliminates the risk of die chipping by encapsulating the silicon to provide full protection to the die as well as providing 
excellent moisture isolation. When board space is a key concern, AOC4810 provides a great option to further enhance power 
density. With dimensions of only 3.2mm x 2mm, AOC4810 offers a maximum RSS level of 8.8mOhms to minimize 
conduction loss and heat dissipation.  
“The new AOS common-drain MOSFETs help simplify battery pack circuitry and save space in today’s compact battery 
pack designs. Combined with their high ESD capability and ultra-low on-resistance, this new family enables a new level of 
size and safety for enhanced battery performance.” said George Feng, Senior Manager of Product Marketing.  
The AON6810, AON6812, and AOC4810 are all RoHS and Halogen-Free compliant.